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smps mosfet hexfet power mosfet notes through are on page 8 applications high frequency dc-dc converters
so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a symbol parameter typ. max. units r jl junction-to-drain lead ??? 20 r ja junction-to-ambient ??? 50 c/w thermal resistance parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v 7.0 i d @ t a = 70c continuous drain current, v gs @ 10v 5.6 a i dm pulsed drain current 56 p d @t a = 25c power dissipation 2.5 w linear derating factor 0.02 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt 3.7 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability form quantity tube/bulk 95 IRF7478PBF-1 tape and reel 4000 irf7478trpbf-1 package type standard pack orderable part number IRF7478PBF-1 so-8 base part number v ds 60 v r ds(on) max (@v gs = 10v) 26 r ds(on) max (@v gs = 4.5v) 30 q g (typical) 21 nc i d (@t a = 25c) 7.0 a m

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! parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 ??? ??? v v gs = 0v, i d = 250 a v (br)dss / t j breakdown voltage temp. coefficient ??? 0.065 ??? v/c reference to 25c, i d = 1ma ??? 20 26 v gs = 10v, i d = 4.2a ??? 23 30 v gs = 4.5v, i d = 3.5a v gs(th) gate threshold voltage 1.0 ??? 3.0 v v ds = v gs , i d = 250 a ??? ??? 20 a v ds = 48v, v gs = 0v ??? ??? 100 v ds = 48v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m parameter min. typ. max. units conditions g fs forward transconductance 17 ??? ??? s v ds = 50v, i d = 4.2a q g total gate charge ??? 21 31 i d = 4.2a q gs gate-to-source charge ??? 4.3 ??? nc v ds = 48v q gd gate-to-drain ("miller") charge ??? 9.6 ??? v gs = 4.5v t d(on) turn-on delay time ??? 7.7 ??? v dd = 30v t r rise time ??? 2.6 ??? i d = 4.2a t d(off) turn-off delay time ??? 44 ??? r g = 6.2 t f fall time ??? 13 ??? v gs = 10v c iss input capacitance ??? 1740 ??? v gs = 0v c oss output capacitance ??? 300 ??? v ds = 25v c rss reverse transfer capacitance ??? 37 ??? pf ? = 1.0mhz c oss output capacitance ??? 1590 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 220 ??? v gs = 0v, v ds = 48v, ? = 1.0mhz c oss eff. effective output capacitance ??? 410 ??? v gs = 0v, v ds = 0v to 48v dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy ??? 140 mj i ar avalanche current ??? 4.2 a s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 4.2a, v gs = 0v t rr reverse recovery time ??? 52 78 ns t j = 25c, i f = 4.2a q rr reverse recoverycharge ??? 100 150 nc di/dt = 100a/ s diode characteristics 2.3 56 "

! fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 7.0a 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = 25v 20 s pulse width

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! fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0 10 20 30 40 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 4.2a v = 12v ds v = 30v ds v = 48v ds fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 2.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms fig 8. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd

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! fig 11. maximum effective transient thermal impedance, junction-to-ambient 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms %
1 0.1 % % &' % + - % fig 9. maximum drain current vs. ambient temperature 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 t , case temperature ( c) i , drain current (a) c d

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! fig 13. on-resistance vs. gate voltage fig 12. on-resistance vs. drain current fig 14a&b. basic gate charge test circuit and waveform fig 15a&b. unclamped inductive test circuit and waveforms fig 15c. maximum avalanche energy vs. drain current d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.9a 3.4a 4.2a 0 102030405060 i d , drain current (a) 0.016 0.018 0.020 0.022 0.024 0.026 0.028 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) v gs = 10v v gs = 4.5v 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 v gs, gate -to -source voltage (v) 0.01 0.02 0.03 0.04 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) i d = 7.0a

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! so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 b as ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max mil l ime t e r s inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l ine conf or ms t o j e de c ou t l i ne ms - 01 2aa. not e s : 1. dimens ioning & t olerancing pe r as me y14.5m-1994. 2. cont r ol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl ude mol d pr ot r us ions . 6 dime ns ion doe s not incl ude mol d pr ot r us ions . mold protrus ions not t o exceed 0.25 [.010]. 7 dimension is t he length of lead for s oldering t o a s ubst rate. mold protrus ions not t o exceed 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx international rectifier logo f 7101 y = last digit of the year part number lot code ww = week e xample: t his is an irf7101 (mos f et ) p = de s i gnat e s l e ad- f r e e product (optional) a = assembly site code note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

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! repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 16mh, r g = 25 , i as = 4.2a. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss i sd 4.2a, di/dt 160a/ s, v dd v (br)dss , t j 150c 330.00 ( 12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/

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